MOSFET
Enviado por vera1718 • 21 de Agosto de 2013 • Examen • 1.510 Palabras (7 Páginas) • 415 Visitas
November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
___________________________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter 2N7000 2N7002 NDS7002A Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1 MW) 60 V
VGSS Gate-Source Voltage - Continuous ±20 V
- Non Repetitive (tp < 50μs) ±40
ID Maximum Drain Current - Continuous 200 115 280 mA
- Pulsed 500 800 1500
PD Maximum Power Dissipation 400 200 300 mW
Derated above 25oC 3.2 1.6 2.4 mW/°C
TJ,TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C
TL Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300 °C
THERMAL CHARACTERISTICS
RqJA
Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W
2N7000.SAM Rev. A1
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
S
D
G
S
G
D
TO-92
© 1997 Fairchild Semiconductor Corporation
2N7000
(TO-236AB)
2N7002/NDS7002A
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 μA All 60 V
IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 2N7000 1 μA
TJ=125°C 1 mA
VDS = 60 V, VGS = 0 V 2N7002
NDS7002A
1 μA
TJ=125°C 0.5 mA
IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 2N7000 10 nA
VGS = 20 V, VDS = 0 V 2N7002
NDS7002A
100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V 2N7000 -10 nA
VGS = -20 V, VDS = 0 V 2N7002
NDS7002A
-100 nA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 2N7000 0.8 2.1 3 V
VDS = VGS, ID = 250 μA 2N7002
NDS7002A
1 2.1 2.5
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA 2N7000 1.2 5 W
TJ =125°C 1.9 9
VGS = 4.5 V, ID = 75 mA 1.8 5.3
VGS = 10 V, ID = 500 mA 2N7002 1.2 7.5
TJ =100°C 1.7 13.5
VGS = 5.0 V, ID = 50 mA 1.7 7.5
TJ =100C 2.4 13.5
VGS = 10 V, ID = 500 mA NDS7002A 1.2 2
TJ =125°C 2 3.5
VGS = 5.0 V, ID = 50 mA 1.7 3
TJ =125°C 2.8 5
VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA 2N7000 0.6 2.5 V
VGS = 4.5 V, ID = 75 mA 0.14 0.4
VGS = 10 V, ID = 500mA 2N7002 0.6 3.75
VGS = 5.0 V, ID = 50 mA 0.09 1.5
VGS = 10 V, ID = 500mA NDS7002A 0.6 1
VGS = 5.0 V, ID = 50 mA 0.09 0.15
2N7000.SAM Rev. A1
Electrical Characteristics TA = 25oC unless otherwise noted
Symbol Parameter Conditions Type Min Typ Max Units
ON CHARACTERISTICS Continued (Note 1)
ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 10 V 2N7000 75 600 mA
VGS = 10 V, VDS > 2 VDS(on) 2N7002 500 2700
VGS = 10 V, VDS > 2 VDS(on) NDS7002A 500 2700
gFS Forward Transconductance VDS = 10 V, ID = 200 mA 2N7000 100 320 mS
VDS > 2 VDS(on), ID = 200 mA 2N7002 80 320
VDS > 2 VDS(on), ID = 200 mA NDS7002A 80 320
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
All 20 50 pF
Coss Output Capacitance All 11 25 pF
Crss Reverse Transfer Capacitance All 4 5 pF
ton Turn-On Time VDD = 15 V, RL = 25 W,
ID = 500 mA, VGS = 10 V,
RGEN = 25
2N7000 10 ns
VDD = 30 V, RL = 150 W,
ID = 200 mA, VGS = 10 V,
RGEN = 25 W
2N700
NDS7002A
20
toff Turn-Off Time VDD = 15 V, RL = 25 W,
ID = 500 mA, VGS = 10 V,
RGEN = 25
2N7000 10 ns
VDD = 30 V, RL = 150 W,
ID = 200 mA, VGS = 10 V,
RGEN = 25 W
2N700
NDS7002A
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current 2N7002 115 mA
NDS7002A 280
ISM Maximum Pulsed Drain-Source Diode Forward Current 2N7002 0.8 A
NDS7002A 1.5
VSD Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 115 mA (Note 1) 2N7002 0.88 1.5 V
VGS = 0 V, IS = 400 mA (Note 1) NDS7002A 0.88 1.2
Note:
1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
2N7000.SAM Rev. A1
0 1 2 3 4 5
0
0.5
1
1.5
2
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
9.0
4.0
8.0
3.0
7.0
VG S = 10V
DS
D
5.0
6.0
-50 -25 0 25 50 75 100 125 150
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
R D S ( O N ) , NORMALIZED
V G S = 10V
I D = 500mA
-50 -25 0 25 50 75 100 125 150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
I D = 1 mA
V D S = VGS
Vt h , NORMALIZED
0 0.4 0.8 1.2 1.6 2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
VG S =4.0V
D
RD S ( o n ) , NORMALIZED
7.0
4.5
10
5.0
6.0
9.0
8.0
0 0.4 0.8 1.2 1.6 2
0
0.5
1
...